Ultrathin oxides using N2O on strained Si1−<i>x</i>Ge<i>x</i> layers

Abstract

Microwave N2O plasma oxidation of strained Si1−xGex layers at low temperature (&amp;lt;200 °C) is reported. The hole confinement in accumulation in a metal oxide semiconductor (MOS)-gated SiGe/Si heterostructure has been confirmed by both simulation and experiments. Electrical properties are also discussed.