Magnetic study of the diluted magnetic semiconductor Sn1−<i>x</i>Mn<i>x</i>Te

Abstract

New measurements of the magnetic carrier-induced properties of Sn1−xMnxTe for x≤0.10 are presented. The results of these and previously reported measurements for other compositions and carrier concentrations will be compared to model calculations of the low-temperature magnetic state. A magnetic phase diagram will be presented.