Magnetoresistance and Hall effect of a disordered interacting two-dimensional electron gas

Abstract

We calculate the corrections to the resistance $R$ and Hall resistance ${R}_{H}$ of a two-dimensional disordered electronic system due to interactions in the strong-field limit ${\ensuremath{\omega}}_{c}<{\ensuremath{\epsilon}}_{F}$, ${\ensuremath{\epsilon}}_{F}\ensuremath{\tau}>1$ where localization effects are suppressed. We find that $\ensuremath{\Delta}{\ensuremath{\sigma}}_{\mathrm{xy}}=0$ for both ${\ensuremath{\omega}}_{c}{\ensuremath{\tau}}_{<}^{>}1$. With the result that $\frac{(\frac{\ensuremath{\delta}{R}_{H}}{{R}_{H}})}{(\frac{{\ensuremath{\delta}}_{R}}{R})}=\frac{2}{[1\ensuremath{-}{({\ensuremath{\omega}}_{c}\ensuremath{\tau})}^{2}]}$ oscillating with field because of the field dependence of $\ensuremath{\tau}$ and eventually diverging when $({\ensuremath{\omega}}_{c}\ensuremath{\tau})=1$. $\ensuremath{\delta}\frac{R}{R}$ decreases with increasing field going through zero when ${\ensuremath{\omega}}_{c}\ensuremath{\tau}=1$.