Room Temperature Operation of the InGaAsSb/AlGaAsSb DH Laser at 1.8 µm Wavelength

Abstract

The In0.05Ga0.95As0.04Sb0.96/Al0.2Ga0.8As0.02Sb0.98 DH lasers, which can be operated at room temperature, were fabricated by the LPE method. Their emission wavelength and threshold current density at room temperature are 1.8 µm and 5 kA/cm2 respectively. Their characteristic temperature, defined as T0=ΔT/Δln Jth is 112 K, which is higher than those of InGaAsP/InP DH lasers. Optical output pulse response exhibited sufficiently short rise time, and the spontaneous carrier lifetime around the threshold current was estimated to be 3 ns at room temperature.