Structural characterization of nanometer SiC films grown on Si

Abstract

Continuous, ultrathin silicon carbide (SiC) films of less than 10 nm have been grown on Si by rapid thermal chemical vapor deposition carbonization with high propane flow rates at 1100–1300 °C. X-ray and electron diffraction techniques indicated a monocrystalline structure for these nanometer-scale films. High-resolution transmission electron microscopy reveals that five SiC planes are aligned with four Si planes at the SiC/Si interface. The Fourier transform infrared spectrum of the SiC films exhibits the characteristic Si-C absorption peak at around 800 cm−1, with a FWHM of 45 cm−1.