Direct detection of 0.1–20keV electrons with delta doped, fully depleted, high purity silicon p-i-n diode arrays

Abstract

Direct detection of 0.1–20keV electrons is demonstrated using a boron delta doped high purity Si p-i-n diode array. Molecular beam epitaxy is used to grow a delta layer on the back surface of these fully depletable p-i-n diode arrays to form an electrode for detecting shallow-penetrating ionizing radiation. Device structure, processing, and characterization methods used for device testing and measurement of its response to electrons are discussed. Use of this detector for measuring the Si quantum yield over this wide energy range is also discussed.