Interstitial traps and diffusion in epitaxial silicon films

Abstract

Oxidation-enhanced diffusion in molecular beam epitaxially grown epitaxial silicon films decreases rapidly with depth due to trapping of injected interstitials at microscopic defects. Apparently inconsistent data on trapping kinetics, recently reported in the literature, are resolved by analyzing the time evolution of the interstitial distribution CI(x,t). The analysis enables characterization of trap size and trap concentration in the parts-per-billion range.