High-yield synthesis of In2−xGaxO3(ZnO)3 nanobelts with a planar superlattice structure

Abstract

Homologous compound In2−xGaxO3(ZnO)3 (x ≈ 0.18) nanobelts were successfully synthesized in high yield by a simple thermal vapour method for the first time. Two sets of peaks appear in X-ray diffraction pattern. One is attributed to wurtzite ZnO, while the other is indexed to rhombohedral In2−xGaxO3(ZnO)3 (x ≈ 0.18) with lattice constants a = 0.335 nm and c = 4.24 ± 0.01 nm within experimental errors. Cross-section high-resolution transmission electron microscopy observations and XRD data confirmed the formation of a planar superlattice structure in the nanobelts, which consists of alternate stacking of In–O layers and In1−xGax/Zn–O blocks along the [0001] direction, which is normal to the growth direction, leading to the (0001) plane as a surface.