Applied Physics Letters · 2006 · 122 citations · 19 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsCarrier TransportIii-v SemiconductorsSemiconductor Device MaterialsSemiconductor PhysicsSemiconductor Thin FilmsTerahertz SpectroscopyCarrier Transport In SemiconductorsCharge Carrier DensityComplex ConductivityElectrical Transport PropertiesElectron MobilityElectron Transport In SemiconductorsElectronic TransportSemiconductor Conductivity
We report time-resolved terahertz spectroscopy measurements of the electronic transport properties of dilute GaAs bismide and nitride alloys. The electron mobility for GaAs1−yBiy (y=0.84%) extracted from Drude fits to the transient complex conductivity was ∼2800cm2∕Vs at a carrier density of 2.7×1018cm−3, close to the mobility of 3300cm2∕Vs measured for GaAs at a similar carrier density. The electron mobility did not decrease significantly for Bi concentrations up to 1.4%. In contrast, the GaNxAs1−x (x=0.84%) and GaNxAs1−x−yBiy (x=0.85%, y=1.4%) films exhibited non-Drude behavior with a highly reduced electron mobility and suppressed conductivity at low frequencies indicative of carrier localization.
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Molecular beam epitaxy growth of GaAs1−xBix
S. Tixier, M. Adamcyk, T. Tiedje et al. · Applied Physics Letters · 2003 · 453 citations
Natural Sciences, Materials Engineering, Materials Science +17
Bowing parameter of the band-gap energy of GaNxAs1−x
Wengang Bi, C. W. Tu · Applied Physics Letters · 1997 · 403 citations