Substrate effect on the deposition of Zn3P2 thin films prepared by a hot-wall method

Abstract

Zn3P2 thin films have been deposited by a hot-wall method on Pyrex glass and (100)GaAs substrates. For GaAs crystalline substrates, higher deposition rates were obtained at the same source and substrate temperatures than those for glass substrates. Layers deposited on (100) GaAs substrates showed stronger preferential (004)orientation of the tetragonal structure, and hence an improved columnar structure is obtained as compared with those on glass substrates. The films having higher crystalline quality deposited on GaAs substrates have room-temperature resistivities as low as ∼10 Ω cm.