Nitric acid oxidation of Si (NAOS) method for low temperature fabrication of SiO2/Si and SiO2/SiC structures

On Pre-Breakdown Phenomena in Insulators and Electronic Semi-Conductors

J. Frenkel · Physical Review · 1938 · 2K citations

Natural Sciences, Materials Science, Physics +14

Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes

H.C. Card, E. H. Rhoderick · Journal of Physics D Applied Physics · 1971 · 1.8K citations

Engineering, Electrical Engineering, Materials Science +17

MOS (Metal Oxide Semiconductor) Physics and Technology

K.J.S. Cave · IEE Proceedings I Solid State and Electron Devices · 1983 · 1.7K citations

Engineering, Chemical Engineering, Nuclear Engineering +12

Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

S.-H. Lo, D. A. Buchanan, W. Wang · IEEE Electron Device Letters · 1997 · 812 citations

Engineering, Electrical Engineering, Microelectronics +16

Electrical characterization of thin Al2O3 films grown by atomic layer deposition on silicon and various metal substrates

Markus D. Groner, Jeffrey W. Elam, F. Fabreguette et al. · Thin Solid Films · 2002 · 724 citations

Natural Sciences, Materials Engineering, Materials Science +17