Layer-by-layer sputtering and epitaxy of Si(100)

Abstract

We report oscillations in diffracted electron intensities during ion bombardment of Si(100) by 200- and 250-eV Xe, both alone and with sequential and simultaneous epitaxy. Analysis of the phase and frequency of the oscillations shows that, to first order, ion bombardment ``undoes'' previous epitaxy and cancels or partially cancels simultaneous deposition. Surprisingly, the phase relationship of growth and sputtering is both antisymmetric and linear, indicating that the ion-induced oscillations are dominated by simple, vacancy-mediated, layer-by-layer sputtering.