The Effects of Proton Implant on GaAs Isolation Properties

Abstract

The semi‐insulating property of and the backgating (or sidegating) effect are intimately related. Protons implanted at high energy have been demonstrated to reduce the backgating effect by damaging the crystal and, thus, creating electron traps. This damage process also has an impact on the isolation properties of the material. The isolation and backgating properties of the intrinsic material and proton implanted material, as a function of temperature and voltage, are measured and compared. Activation energies for substrate leakage current are calculated and reported.