Comparative study of 200-300 GHz microwave power generation in GaN TEDs by the Monte Carlo technique

Abstract

Electron transport and microwave power generation in the 200-300 GHz frequency range by n+-n--n-n+ zincblende GaN and n+-p-n-n--n+ wurtzite GaN structures have been studied by a Monte Carlo particle simulation which solves the Boltzmann transport and Poisson's equations along with equations governing the associated circuit elements and parasitic contact resistance. It is shown that at 300 K in the 230-250 GHz frequency range over 350 mW microwave power can be delivered by the n+-p-n-n--n+ wurtzite GaN structure in continuous wave operation mode and over 1.3 W in pulsed mode.