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Chemical and structural analyses of the titanium nitride/alpha (6H)-silicon carbide interface
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1992
Year
Titanium Nitride/alphaEngineeringVacuum DeviceSilicon On InsulatorIon ImplantationIon-assisted Reactive EvaporationNitrogen IonsMaterials ScienceMaterials EngineeringElectrical EngineeringTin FilmsCrystalline Defects-Silicon Carbide InterfaceStructural AnalysesStructural CeramicMicrostructureSurface ScienceApplied PhysicsAlloy DesignThin FilmsChemical Vapor DepositionCermetCarbide
Ion-assisted reactive evaporation (IARE) using low-energy (100 eV) nitrogen ions was employed to deposit TiN films onto the vicinal Si-terminated (0001) face of α(6H)-SiC single crystals at 350 °C in an ultrahigh vacuum chamber operated at a working pressure of 2×10−4 Torr. The initial exposure of the SiC surface to nitrogen ions for a 2-min period resulted in Si–N bonding. This exposure was also an important step in attaining ohmic contact properties at low temperature, and the formation of a thin (≊5–15 Å) amorphous layer at the interface. The disorder was maintained after the deposition of 5 Å of TiN. The TiN contacts were ohmic after deposition; they showed little change in microstructural or electrical properties after annealing at 450, 550, and 600 °C for 15–30 min. The results of this research indicate that a metal–insulator–semiconductor structure was responsible for obtaining the contact properties.