Numerical solutions for a one-dimensional silicon n-p-n transistor

Abstract

This paper describes a technique of obtaining numerical solutions of the basic carrier transport equations for a semiconductor and the results of some calculations pertaining to a silicon n-p-n transistor. The calculations include dc characteristics in direct and inverse operation, saturation parameters, and small-signal ac common emitter <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">h</tex> -parameters. Both Boltzmann and Fermi statistics have been used, and the dependence of carrier mobilities on electric field has been taken into account.