A theory for negative resistance and memory effects in thin insulating films and its application to Au-ZnS-Au devices

Abstract

Negative resistance and memory effects occurring in formed thin insulating films are described and new experimental results for zinc sulphide thin film devices are presented. Contrary to previous work the voltage for maximum current is shown not to be a constant. The switching time of the devices is interpreted in terms of an activation energy. Previous theories are shown to be unsatisfactory and a theory based on the thermal rupture of conducting filaments and applicable to all such formed devices is presented.