A new bird's-beak free field isolation technology for VLSI devices

Abstract

A new field isolation technology ide-- al for VLSI devices has been developed incorporating a unique two step oxide-burying process. This technology is completely free from bird's beak formation which is particularly important for increasing the packing density. A near-perfect planar surface structure is also obtained. MOS devices fabricated by the new technology showed no thershold voltage increase due to the narrow channel effect for channel widths down to submicron region.