Flexible Transparent Junctionless TFTs With Oxygen-Tuned Indium-Zinc-Oxide Channels

Abstract

Flexible low-voltage transparent junctionless thin-film transistors (TFTs) with oxygen-tuned indium-zinc-oxide (IZO) active layers are fabricated on polyethylene terephthalate plastic substrates at room temperature with only one shadow mask. IZO films deposited in gradient oxygen ambient are used as the channel and source/drain electrodes without any source/drain junction. High performance with a low subthreshold swing of 0.13 V/decade and a high drain current ON/OFF ratio 106 are obtained in both flat and curving states. A field-effect mobility with a upper limit value of ~60 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V.s is obtained with a gate voltage sweep speed of 0.05 V/s. Such flexible IZO-based junctionless TFTs with lowcost are promising for portable flexible sensor and bioelectronics applications.