A Schottky-barrier solar cell on sliced polycrystalline GaAs

Abstract

Antireflecting-metal-oxide-semiconductor (AMOS) technology has been applied to sliced wafers of polycrystalline GaAs having grain sizes of about 100 μm. Simulated AM1 sunlight efficiencies up to 14% were obtained, and studies using the scanning electron microscope showed that grain boundaries have minimal effect on short-circuit current density. However, current-voltage characteristics show some influence on open-circuit voltage.