Global model of Czochralski silicon growth to predict oxygen content and thermal fluctuations at the melt–crystal interface - Concepedia

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Global model of Czochralski silicon growth to predict oxygen content and thermal fluctuations at the melt–crystal interface

23

Citations

3

References

2001

Year

I. Yu. Evstratov, V.V. Kalaev, V.N Nabokov, Alexander I. Zhmakin, Yu.N. Makarov, Nikolay Ivanov, E. A. Rudinsky, Samuel A. Lowry, E. Dornberger, J. Virbulis,

Microelectronic Engineering

Materials ScienceThermal FluctuationsEngineeringCrystalline DefectsCrystal Growth TechnologyApplied PhysicsCondensed Matter PhysicsSilicon On InsulatorMelt–crystal InterfaceCzochralski Silicon Growth

References

	Year	Citations

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