Advanced Materials · 2013 · 188 citations · 49 references
Natural SciencesElectrical EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor DevicesNanostructured Electronic MaterialsNanowiresOptical Thin FilmsPhotodetectorsSemiconductor NanomaterialsSoft LithographyMechanical Properties Of NanowiresNanowire DevicesNanowire PhotodetectorsNanowire Semiconductor MaterialsPhotodetectionScratching BehaviorSemiconductor Nanowires
Fabrication of intrinsically stretchable nanowire photodetectors based on fully embedded structures is reported. A lithographic filtration method is used to integrate different functional layers into the photodetectors, which exhibit excellent stretchability up to 100%. The fully embedded structure enables excellent stability against repeated stretching, mechanical scratching, and adhesive forces.
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