Optical properties of anodically grown native oxides on some Ga-V compounds from 1.5 to 6.0 eV

Abstract

Complex refractive-index and dielectric function data are given for anodically grown native oxides on GaP, GaAs, and GaSb from 1.5 to 6.0 eV. The absorption thresholds for the oxides on GaAs and GaSb occur at 5.0 and 4.2 eV, respectively, with weak tails extending 0.5 eV to lower energy. The absorption threshold in GaP is not seen but is estimated to be near 7 eV. A comparison of these data with each other and with those for SiO2 and GeO2 suggests a more complex bonding behavior than a simple amorphous phase.