Electronics Letters · 1992 · 23 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsQuantum WellsSemiconductor HeterostructuresSemiconductor InterfacesSemiconductor PhysicsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsArea CoverageBandgap EngineeringQuantum Well Band StructureQuantum Well HeterostructuresQuantum Well StructuresSilica Deposition
Dielectric cap disordering with strontium fluoride masking is used to provide a range of bandgap values in GaAs/AlGaAs quantum wells using a single annealing step. Partial area coverage by a strontium fluoride mask under a silica cap determines the amount of quantum well intermixing.