Mobility studies of field-effect transistor structures basedon anthracene single crystals

Abstract

The charge carrier transport in anthracene single crystals has been studied by means of field-effect transistor (FET) structure. The FET mobility (μFET) revealed the nonmonotonous, reliant on gate-voltage (Vg), temperature dependence with the maximum μFET∼0.02cm2∕Vs at T∼170–180K and Vg∼−30V. At temperatures below 180K the mobility decreases and becomes thermally activated with the Vg-dependent activation energy Ea∼40–70meV governed by shallow traps. The space-charge-limited current is the dominant transport mechanism in FET structures based on anthracene single crystals.