Procedia Engineering · 2014 · 26 citations · 1 references
EngineeringMaterials ScienceMechanical EngineeringMicroelectromechanical SystemsSemiconductor DevicesSensorsMechanical SensorsPhysical SensorsPressure MeasurementPressure SensorsTemperature SensorsThermal SensorsDeep Reactive Ion EtchingHigh-temperature Pressure SensorsHigh-temperature SensorsPiezoresistive Pressure SensingPiezoresistive Pressure SensorsPressure SensingReactive Ion EtchingSilicon
In this paper we present a high reliable, accurate and safe, solid state pressure sensor for high temperature applications. The sensor is based on an unique fluid-free technology using a piezoresistive SOI-based chip enclosed in a sealed metal housing. The proprietary housing concept allows a complete separation of the SOI-chip from the measured media. A thick steel membrane and an elongated member (push-rod) transfer the outside pressure into a small deflection of a silicon membrane on the SOI-chip. The thin silicon membrane is engraved by DRIE (Deep Reactive Ion Etching). The sensor is capable to measure pressures up to 1000 bar at temperature up to 400 °C with an accuracy of ±0,50%FSO. A digital correction enables a compensation of Offset and Sensitivity thermal drifts. The sensor can undergo long-term extreme working conditions without losing its performances.
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