New hydride vapor phase epitaxy for GaP growth on Si

Abstract

Gallium phosphide films are successfully grown on (100) Si substrates by a new hydride vapor phase epitaxy. Mixing of reactant vapors just above the substrate makes the growth rate as high as 50 nm/min even in the temperature range of 350–450 °C. This makes the two-step growth procedure applicable for growing a single domain GaP film on Si from H2-HCl-PH3-Ga reactants. An etch pit density of 7.5×106 cm−2 and a full width at half-maximum of 93 arcsec in a double-crystal x-ray rocking curve are achieved. Green light-emitting diodes with 565 nm peak wavelength are successfully fabricated using nitrogen-doped GaP films grown on Si.