Application of the Focused-Ion-Beam Technique for Preparing the Cross-Sectional Sample of Chemical Vapor Deposition Diamond Thin Film for High-Resolution Transmission Electron Microscope Observation

Abstract

Atomic-scale observation of chemical vapor deposition (CVD)-diamond/silicon interface structures was successfully performed by applying a focused-ion-beam (FIB) technique for preparing the cross-sectional samples. Several severe conditions such as weak adhesion and extreme difference in sputtering yield have virtually prevented the proper processing of the interface cross sections by only the conventional method. A sample preparation procedure is proposed with some specific devices for extreme thinning, sufficient for high-resolution transmission electron microscope (HRTEM) observation, emphasizing the good potential for wider practical use.