Linear Mode Avalanche Photodiode With High Responsivity Integrated in High-Voltage CMOS

Abstract

A fully integrable avalanche photodiode fabricated in a 0.35-μm standard high-voltage CMOS process is presented. The device achieves a high unamplified responsivity (M = 1) of 0.41 A/W and a maximum responsivity (M = 6.6 · 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> ) of 2.7 · 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> A/W for 5-nW optical power using a 670-nm laser source. The maximum bandwidth of 850 MHz was measured at 500-nW and 5-μW optical power which results in a responsivity bandwidth product of 17.4-GHz · A/W for a gain of M = 50.