Bulk growth of high-purity 6H-SiC single crystals by halide chemical-vapor deposition

Abstract

High-purity 6H-SiC single crystals were grown by the halide chemical-vapor deposition process. Growth was performed in a vertical hot-wall reactor with a separate injection of a silicon precursor (silicon tetrachloride) and a carbon precursor (propane). Typical growth rates were between 100 and 300μm∕h. The crystals contain very low concentrations of residual impurities. The main contaminants, namely, nitrogen and boron, are in the 1014atomscm−3 range. Crystals grown under Si-rich conditions were n type with low room temperature electron concentrations in the 1014–1015atomscm3 range and with room-temperature electron mobilities approaching 400cm2∕Vs. The resistivity of the material increased up to 1010Ωcm with increasing C∕Si ratio. Deep levels spectra show that the electron traps density decreases with increasing C∕Si ratio.