Optics Express · 2010 · 72 citations · 19 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesIii-v SemiconductorsIntegrated OpticsIntegrated PhotonicsLaser DiodesPhotodetectorsPhotonic Integrated CircuitsFlip-chip BondingHeat DissipationIntegrated PhotodetectorsIntegrated WaveguidesMetal-semiconductor InterfacesSemiconductor Laser DiodesSilicon WaveguidesWaveguide Integration
On-chip integration of III-V laser diodes and photodetectors with silicon nanowire waveguides is demonstrated. Through flip-chip bonding of GaInNAs/GaAs laser diodes directly onto the silicon substrate, efficient heat dissipation was realized and characteristic temperatures as high as 132K were achieved. Spot-size converters for the laser-to-waveguide coupling were used, with efficiencies greater than 60%. The photodetectors were fabricated by bonding of InGaAs/InP wafers directly to silicon waveguides and formation of metal-semiconductor-metal structures, giving responsivities as high as 0.74 A/W. Both laser diode and the photodetector were integrated with a single silicon waveguide to demonstrate a complete on-chip optical transmission link.
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Electrically pumped hybrid AlGaInAs-silicon evanescent laser
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125 Gbit/s carrier-injection-based silicon micro-ring silicon modulators
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