Publication | Closed Access
Two-step growth of m-plane GaN epilayer on LiAlO2 (1 0 0) by metal-organic chemical vapor deposition
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Citations
14
References
2006
Year
Materials ScienceMaterials EngineeringWide-bandgap SemiconductorEngineeringM-plane Gan EpilayerSurface ScienceApplied PhysicsTwo-step GrowthAluminum Gallium NitrideGan Power DeviceGallium OxideCategoryiii-v Semiconductor
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