Optical functions of ion-implanted, laser-annealed heavily doped silicon

Abstract

The optical functions of silcon heavily doped with Ge, P, As, and B are determined using spectroscopic ellipsometry measurements from 240 to 840 nm (5.16 to 1.47 eV). Below the direct band gap, there is a residual enhancement of the optical-adsorption coefficient for silicon heavily doped with n-type dopants, which cannot be explained by surface roughness. In the low-energy region of the observed spectrum, it is found that both free-carrier and strain effects alter the complex dielectric function.