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An analytical two dimensional subthreshold behavior model to study the nanoscale GCGS DG Si MOSFET including interfacial trap effects

Device ModelingElectrical EngineeringAnalytical TwoEngineeringPhysicsNanoelectronicsBias Temperature InstabilityApplied PhysicsSemiconductor Device FabricationMicroelectronicsInterfacial Trap EffectsSemiconductor Device