Nanoscale strain analysis of strained-Si metal-oxide-semiconductor field effect transistors by large angle convergent-beam electron diffraction

Abstract

In this letter we report the characterization of local compressive strain in p-type strained-silicon channel metal-oxide-semiconductor field effect transistors by large angle convergent-beam electron diffraction. The compressive strain was induced into the channel region of gate length of 80nm strained-Si p-type metal-oxide-semiconductor field effect transistor by Ge preamorphization implantation for source/drain extension. A method to distinguish between compressive strain and shear strain in the cross-sectional transmission electron microscopy specimens is proposed.