Chemical Vapor Deposition · 2001 · 20 citations · 0 references
Natural SciencesChemistryMaterials ScienceMaterials ChemistrySolid-state ChemistryThin FilmsGrain Structure FormationMetal OxidesThin-film DepositionThin-film MaterialsCrystal Preferred OrientationCrystallographic Preferred OrientationDeposition TechniquesGrain StructurePrecursor ChemistryPreferred OrientationTemperature Effects On Deposition
High-purity osmium film deposition is reportedfrom two volatile osmium complexes cis-Os(CO)4I2 and fac-Os(CO)3(hfac)(trifluoroacetate). SEM analysis of films grown from cis-Os(CO)4I2 at 450 °C shows snowflake type microcrystalline grains, which change at a higher deposition temperature of 550 °C to a closely packed microcrystalline grain structure (see Figure), with a preferred orientation along the (100) planes.