Third-order nonlinearities in silicon at telecom wavelengths

Abstract

The two-photon absorption coefficient and Kerr coefficient of bulk crystalline silicon are determined near the telecommunication wavelengths of 1.3 and 1.55 μm using femtosecond pulses and a balanced Z-scan technique. A phase shift sensitivity of the order of 1 mrad is achieved, enabling the accurate measurement of third-order nonlinear coefficients at fluences smaller than 100 μJ/cm2. From the two-photon absorption coefficient (β∼0.8 cm/GW) and the Kerr coefficient (n2∼4×10−14 cm2/W) at a wavelength λ=1.54 μm, a value F∼0.35 for the nonlinear figure of merit for all-optical switching is determined.