Dislocation cell structures in melt‐grown semiconductor compound crystals

Abstract

Abstract The phenomenon of dislocation patterning during melt growth of III‐V, II‐VI and IV‐VI semiconductor crystals is discussed. The paper is focused on the formation of cellular structures driven by the growth inherent thermo‐mechanical stress. Of particular interest is the scaling of relations between cells size, dislocation density and acting shear stress. Among the materials there are characteristic similarities but also significant variations of the cell genesis. After the related compound specifics are discussed possible measures for retardation of cell patterning during growth are demonstrated. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)