Field Emission from an Ion Irradiated Photoresist

Abstract

The field emission from Ar ion irradiated photoresist material is demonstrated. A photoresist of novolac-type positive-tone is used as the test material. The electrical resistivity of the photoresist film is found to decrease after Ar ion implantation at doses on the order of 10 16 cm -2 . Raman spectroscopy shows that carbon-carbon bonds such as the graphite bond are produced due to ion bombardment. For the field emission, a pyramid-like structure is prepared using oxygen-plasma etching and Ar ions are implanted to the pyramid-like structured photoresist. Electron emission of the order of 10 -6 A is observed for implanted samples, while no emission is detected from unimplanted samples.