Synthesis of Nitrogen‐Doped Graphene Using Embedded Carbon and Nitrogen Sources

Abstract

A facile strategy to grow nitrogen-doped graphene using embedded nitrogen and carbon in metal substrate via a segregation method is reported. As doping is concurrently carried out in the segregation process of the carbon species, N atoms can be substitutionally doped into the graphene lattice. This approach allows precise control of the doping degree and location, which enables growing various heterojunctions at the desired location.