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Modeling and Simulation of Poly-Space Effects in Uniaxially-Strained Etch Stop Layer Stressors
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2007
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Electrical EngineeringEngineeringScalable ModelMechanicsStressMechanical EngineeringApplied PhysicsStressstrain AnalysisSolid MechanicsResidual StressPoly-space EffectsElectronic PackagingStructural MechanicsMicroelectronicsStress SimulationsCircuit PerformanceMechanics Of MaterialsInterconnect (Integrated Circuits)
We develop, for the first time, a compact and scalable model to account for the poly-space effects (PSEs) in uniaxially-strained etch stop layer (ESL) stressors. The model is based on 2-dimensional (2D) finite element (FEM) stress simulations and 4-point bending characterization of silicon, and agrees well with measured data. The impact of PSEs on circuit performance is also discussed.