Proceedings - IEEE International SOI Conference/Proceedings · 2007 · 11 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceFinite Element AnalysisMicroelectronicsSemiconductor DevicesDevice SimulationStrain AnalysisStrain EngineeringStress AnalysisStress-strain BehaviorThin Film StrainEtch DamageFinite Element Stress AnalysisMechanical Stress ModelingStress CompensationStress Engineering In Thin FilmsStress Perturbation Modeling
We develop, for the first time, a compact and scalable model to account for the poly-space effects (PSEs) in uniaxially-strained etch stop layer (ESL) stressors. The model is based on 2-dimensional (2D) finite element (FEM) stress simulations and 4-point bending characterization of silicon, and agrees well with measured data. The impact of PSEs on circuit performance is also discussed.