Grain Size Effect of CuFeTe₂ Response to Oxygen

Abstract

The electrical resistivity of the layered semiconductor CuFeTe 2 is created in response to oxygen concentration intercalated into the van der Waals gaps. An oxygen gas sensor operating around room temperature has been fabricated using this property. The resistivity response to oxygen has been improved by the use of crystal grains of uniform size. The specimen consisting of grains with diameters of 20∼53 µm responds to 20% oxygen mixed into nitrogen in 2 min.