X-Ray Analysis of Stacking Fault Structures in Epitaxially Grown Silicon

Abstract

X-ray diffraction microscopy measurements were made on epitaxial silicon. The diffraction contrast produced by different stacking fault combinations was investigated. Fault structures were deduced from changes in diffraction contrast that occur in topographs recorded by different Bragg reflections. It was found that diffraction contrast of single-bend and multibend faults is in agreement with the occurrence of stair-rod dislocations at each bend. Diffraction contrast due to line defects is not consistent with the idea of simple stacking faults. The x-ray measurements indicate that the line defects are also traces of bent stacking faults. The bend must be parallel to the substrate-layer interface. It is concluded that line defects are generated by a stress relief mechanism.