Growth of highly oriented carbon nanotubes by plasma-enhanced hot filament chemical vapor deposition

TLDR

Carbon nanotubes were grown on nickel substrates by plasma‑enhanced hot‑filament CVD below 666 °C using acetylene as the carbon source and ammonia as dilution gas, with plasma intensity, gas ratios, and flow rates controlling the growth. The resulting nanotubes vary from 10 to 500 nm in diameter and 0.1 to 50 µm in length, with growth conditions influencing diameter and uniformity.

Abstract

Highly oriented, multiwalled carbon nanotubes were grown on polished polycrystalline and single crystal nickel substrates by plasma enhanced hot filament chemical vapor deposition at temperatures below 666 °C. The carbon nanotubes range from 10 to 500 nm in diameter and 0.1 to 50 μm in length depending on growth conditions. Acetylene is used as the carbon source for the growth of the carbon nanotubes and ammonia is used for dilution gas and catalysis. The plasma intensity, acetylene to ammonia gas ratio, and their flow rates, etc. affect the diameters and uniformity of the carbon nanotubes.