The nature of defects in<i>n</i>+ gallium arsenide

Abstract

Abstract Faulted defects and prismatic loops have been observed in gallium arsenide heavily doped with tellurium or selenium. It has been shown by contrast analysis that both types of defect are of interstitial character in contrast to previous conclusions that the prismatic loops were of vacancy type. The prismatic loops are composed of equal numbers of gallium and arsenic interstitials whereas the faulted defects are thought to be associated with layers of gallium telluride. The results of electron-irradiation experiments support the conclusion that the two types of defect are chemically different.