<i>p</i> MOS transistors for dosimetric application

Abstract

The dosimetric properties of Al-gate pMOS transistors, for low-level dose, are investigated. A radiation environment was simulated by 60Co gamma rays. The experiments have demonstrated that pMOS transistors with a thickness of 2 μm, irradiated to 1000 rad (Si) with 9 V on the gate, provide a good sensitivity of 20mV/rad, as well as a stability of 4-2% after 1000 h room-temperature annealing.