Room-temperature operation of an InGaAsP double-heterostructure laser emitting at 1.55 μm on a Si substrate

Abstract

The room-temperature operations of an InGaAsP double-heterostructure (DH) laser emitting at 1.55 μm on a Si substrate is reported. A pulsed threshold current as low as 46 mA has been measured for a ridge waveguide laser with a 4 μm strip width and a 200 μm cavity length. This successful laser operation is due to the high crystalline quality of the DH structure with full width at half maximum of x-ray rocking curves as low as 110 arcsec grown on a Si substrate by the organometallic vapor phase epitaxy/vapor mixing epitaxy hybrid method. A correlation between the optical property of an InGaAsP DH and its crystalline quality is also discussed.