Fine Particles of Silicon. I. Crystal Growth of Spherical Particles of Si

Abstract

Fine crystals of Si having spherical shapes of less than 200 nm, as well as hybrid particles of Si and β-SiC were prepared by a gas evaporation method using an arc discharge as the heat source. Si particles always contain stacking faults and twins which are categorized as growth faults. All the planar faults in a particle occur in the same orientation (parallel to a [110] direction). The nature of these planar faults was examined in terms of crystal growth using an electron microscope. As a result, it has been concluded that these spherical Si particles are crystallized from liquid droplets which condense from Si vapors.