Two‐Step Thermal Anneal and Its Application to a CCD Sensor and CMOS LSI

Abstract

The two‐step thermal anneal has been investigated in detail for the control of oxygen precipitation. The correlations of interstitial oxygen reduction after the two‐step thermal anneal, the interstitial oxygen in the as‐grown wafer, and the microdefect density are made clear. There is a critical oxygen concentration for the oxygen precipitation. It depends on the first step annealing time and the substitutional carbon concentration. The two‐step thermal anneal was applied successfully to a CCD image sensor and CMOS LSI to improve their performance.