Ring-shaped stacking faults induced by oxide precipitates in silicon

Abstract

Repeated heat treatments at 1100 °C on CZ-grown wafers result in the nucleation and growth of stacking faults in the vicinity of oxygen precipitates. During the high-temperature treatment, the precipitates and the stacking faults grow. During the cooling, new precipitates form on the SF bounding partial which by their subsequent growth can generate a ring-shaped stacking fault on top of the first one. Possible mechanisms involve interstitial condensation at the SF partial or vacancy generation by the partial climb. Models of the growth kinetics are discussed and take into account both mechanisms.